[Electron Device] Taiwan's Thin-film Transistor Technology Draws International Attention

[Electron Device] Taiwan's Thin-film Transistor Technology Draws International Attention (Chinese Version)

China Times E-paper (2011/12/07) After Intel's mass production of 22-nano semiconductor chips, a competition advancing toward the 10-nano fabrication technology has begun among many countries in the world. Taiwan's National Nano Device Laboratories has succeeded in advancing transistor's operation speed by two to four times, breaking through the bottleneck of the present defects of the silicon substrate by using simple germanium. This has created a new stage for Taiwan's approaching 10-nano fabrication technology.

The related findings of the technology were presented in 2011 IEEE International Electron Devices Meeting (IEDM) at Washington on December 7 and were selected as ones of the papers in focus. Besides, Taiwan's invention of the CuInGaSe2 (CIGS) thin-film fabrication technology, which can be widely adopted in manufacturing solar batteries, together with its application, a silicon solar device for self-supplied power circuit module, won a lot of attention from the participants.

According to the Vice Director of Nano Device Laboratories Wen-fa WU, the introductions of the new materials and power saving technology are the key points for the development of 10 nano fabrication process, the enhancement of the chip performance and the microminiaturization of the devices. Four papers in 2011 IEDM were contributed by teams from Taiwan and they were internationally recognized to be significant technical options for approaching 10 nano devices.


Reference:
China Times E-paper 2011/12/07 (Chinese)

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