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[NanoTech][Memory] Taiwan Innovates Globally Smallest 9nm Functional Resistive Memory with Lowest Programming-current (<a href=http://mepopedia.com/forum/read.php?127,9900>Chinese Version</a>)

<i>RTI</i> (2010/12/14), <i>udn.com</i>, &<i>The Liberty Times</i> (2010/12/15) National Nano Device Laboratories (NDL), Taiwan, innovates the globally first smallest 9nm functional resistive memory cell with the lowest programming-current (<1uA). With the new technology, an one square centimeter memory chip can store the data of one entire library almost without any power consumption. The mass production of this technology is expected to occur in five to ten years.

The findings of NDL's research “9nm Half-Pitch Functional Resistive Memory Cell with <1uA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film” was presented at International Electron Devices Meeting (IEDM) in San Francisco last week. This paper was selected as one of the papers of the day by the host and reported by <i>Nikkei</i> (<i>Japan Economic News</i>, <i>Nihon Keizai Shimbun</i>).

NDL points out, the 9nm functional resistive memory cell is a perfect artistic piece whose size is 100 times smaller than a B-type influenza virus. It takes only one square centimeter to contain more than five hundred billion cells, which can store one hundred hours of 3D films, one million pieces of photos, or more than two hundred hours 0f DVD films. Such a storage is sufficient to store the text data of one entire library.

NDL also points out, the global flash memory market has the scale of about one trillion NT dollars, less 1 % of which is taken by Taiwan however; the 9nm memory is potential to replace the flash memory and reach a market scale of about two trillion. As long as Taiwan's patent portfolios are well-disposed, Taiwan has a chance to take 10% of the whole market share.


Further Information:
<a href=http://news.rti.org.tw/index_newsContent.aspx?nid=271953&id=3&id2=1>RTI 2010/12/14</a> (Chinese)
<a href=http://udn.com/NEWS/FINANCE/FIN3/6035203.shtml>Udn.com 2010/12/15</a> (Chinese)
<a href=http://www.libertytimes.com.tw/2010/new/dec/15/today-life13.htm>The Liberty Times 2010/12/15</a> (Chinese)

[NanoTech][Memory] Taiwan Innovates Globally Smallest 9nm Functional Resistive Memory with Lowest Programming-current (Chinese Version)

RTI (2010/12/14), udn.com, &The Liberty Times (2010/12/15) National Nano Device Laboratories (NDL), Taiwan, innovates the globally first smallest 9nm functional resistive memory cell with the lowest programming-current (<1uA). With the new technology, an one square centimeter memory chip can store the data of one entire library almost without any power consumption. The mass production of this technology is expected to occur in five to ten years.

The findings of NDL's research “9nm Half-Pitch Functional Resistive Memory Cell with <1uA Programming Current Using Thermally Oxidized Sub-Stoichiometric WOx Film” was presented at International Electron Devices Meeting (IEDM) in San Francisco last week. This paper was selected as one of the papers of the day by the host and reported by Nikkei (Japan Economic News, Nihon Keizai Shimbun).

NDL points out, the 9nm functional resistive memory cell is a perfect artistic piece whose size is 100 times smaller than a B-type influenza virus. It takes only one square centimeter to contain more than five hundred billion cells, which can store one hundred hours of 3D films, one million pieces of photos, or more than two hundred hours 0f DVD films. Such a storage is sufficient to store the text data of one entire library.

NDL also points out, the global flash memory market has the scale of about one trillion NT dollars, less 1 % of which is taken by Taiwan however; the 9nm memory is potential to replace the flash memory and reach a market scale of about two trillion. As long as Taiwan's patent portfolios are well-disposed, Taiwan has a chance to take 10% of the whole market share.


Further Information:
RTI 2010/12/14 (Chinese)
Udn.com 2010/12/15 (Chinese)
The Liberty Times 2010/12/15 (Chinese)